International Rectifier
IRLL014N
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA,
PackageSOT-223
MountingSurface Mount
Power2.1W
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Technical Specifications
International Rectifier IRLL014N technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.8A |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Power Dissipation | 2.1W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRLL014N Datasheet
Download the complete datasheet for International Rectifier IRLL014N to view detailed technical specifications.
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