International Rectifier
IRLL014NTR
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
PackageTO-261-4
MountingSurface Mount
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Technical Specifications
International Rectifier IRLL014NTR technical specifications.
General
| Package/Case | TO-261-4 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance | 230pF |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 140mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRLL014NTR Datasheet
Download the complete datasheet for International Rectifier IRLL014NTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.