N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.8A Continuous Drain Current, and 200mΩ maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 2A current rating and a 16V Gate-to-Source Voltage. Designed for surface mount applications, it is housed in a TO-261AA (SOT-223) package with dimensions of 6.7mm length, 3.7mm width, and 1.739mm height. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 2.1W. Turn-on delay is 5.1ns and turn-off delay is 14ns.
PackageSOT-223
Current Rating2A
MountingSurface Mount
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Technical Specifications
International Rectifier IRLL014NTRPBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.8A |
| Current Rating | 2A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 200mR |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.739mm |
| Input Capacitance | 230pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 5.1ns |
| DC Rated Voltage | 55V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLL014NTRPBF Datasheet
Download the complete datasheet for International Rectifier IRLL014NTRPBF to view detailed technical specifications.
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