N-Channel Power MOSFET, SOT-223 package, featuring 55V drain-source voltage and 4.4A continuous drain current. Offers a maximum on-resistance of 80mΩ at a nominal gate-source voltage of 2V. This silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a 2.1W power dissipation. Surface mountable with lead-free construction.
PackageSOT-223
Current Rating3.1A
MountingSurface Mount
Power2.1W
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Technical Specifications
International Rectifier IRLL024NPBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 4.4A |
| Current Rating | 3.1A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 80mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.7mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Power Dissipation | 2.1W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 7.4ns |
| DC Rated Voltage | 55V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLL024NPBF Datasheet
Download the complete datasheet for International Rectifier IRLL024NPBF to view detailed technical specifications.
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