N-Channel Power MOSFET, 30V Drain-Source Voltage (Vdss), 5.5A Continuous Drain Current (ID), and 60mΩ Max Drain-Source On-Resistance. This single-element silicon FET features a TO-261AA (SOT-223) surface-mount package, 2.1W power dissipation, and fast switching speeds with a 14ns fall time. Operating temperature range is -55°C to 150°C.
PackageSOT-223
Current Rating3.9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLL2703PBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | 3.9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.7mm |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 2.4V |
| Turn-Off Delay Time | 6.9ns |
| Turn-On Delay Time | 7.4ns |
| DC Rated Voltage | 30V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLL2703PBF Datasheet
Download the complete datasheet for International Rectifier IRLL2703PBF to view detailed technical specifications.
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