N-Channel MOSFET, 40V Drain-Source Voltage, 3.6A Continuous Drain Current, and 56mΩ Max On-Resistance. This silicon Metal-oxide Semiconductor FET features a 1.8V nominal Gate-Source Voltage and 1.8V Threshold Voltage. Designed for surface mounting in a compact SOT-23 package, it offers a 1.3W Max Power Dissipation and operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 5.1ns Turn-On Delay Time and 6.4ns Turn-Off Delay Time. This component is RoHS compliant.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
International Rectifier IRLML0040TRPBF technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 56MR |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.02mm |
| Input Capacitance | 266pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 6.4ns |
| Turn-On Delay Time | 5.1ns |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLML0040TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLML0040TRPBF to view detailed technical specifications.
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