
N-Channel, Silicon, Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for surface mounting in a TO-236AB (MICRO3) package. Features a continuous drain current of 1.2A, a drain-source voltage of 20V, and a maximum drain-source on-resistance of 250mΩ. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 540mW. Includes a gate-source voltage of 12V and a threshold voltage of 700mV. RoHS compliant and lead-free.
International Rectifier IRLML2402TRPBF technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 1.2A |
| Current Rating | 1.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 250mR |
| Dual Supply Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.02mm |
| Input Capacitance | 110pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 9.7ns |
| Turn-On Delay Time | 2.5ns |
| DC Rated Voltage | 20V |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLML2402TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
