International Rectifier
IRLML2502TR
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-3
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRLML2502TR technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 4.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 740pF |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 45mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRLML2502TR Datasheet
Download the complete datasheet for International Rectifier IRLML2502TR to view detailed technical specifications.
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