P-channel MOSFET, designed for small signal applications. Features a 20V Drain-Source Voltage (Vdss) and a continuous drain current of -610mA. Offers a low on-resistance of 600mR (max) and a nominal gate-source voltage (Vgs) of -1.5V. Packaged in SOT-23 with SMD/SMT termination, this silicon FET operates within a temperature range of -55°C to 150°C and has a max power dissipation of 540mW. RoHS compliant.
PackageSOT-23
Current Rating-620mA
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Technical Specifications
International Rectifier IRLML6302TRPBF technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | -610mA |
| Current Rating | -620mA |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 600mR |
| Dual Supply Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Nominal Vgs | -1.5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Threshold Voltage | -1.5V |
| DC Rated Voltage | -20V |
| Width | 3.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLML6302TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLML6302TRPBF to view detailed technical specifications.
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