P-channel MOSFET, surface mount, featuring a continuous drain current of 4.3A and a drain-to-source voltage of -12V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.05 ohms, with a gate-to-source voltage rating of 8V. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.3W. The component is lead-free and RoHS compliant, with dimensions of 3.04mm (length) x 1.4mm (width) x 1.02mm (height).
Current Rating-4.3A
MountingSurface Mount
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Technical Specifications
International Rectifier IRLML6401TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | -4.3A |
| Drain to Source Voltage (Vdss) | -12V |
| Dual Supply Voltage | -12V |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.02mm |
| Input Capacitance | 830pF |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Nominal Vgs | -550mV |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 250ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -12V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLML6401TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLML6401TRPBF to view detailed technical specifications.
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