International Rectifier
IRLML6402TR
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3
PackageTO-236-3
Current Rating-3.7A
MountingSurface Mount
Power1.3W
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Technical Specifications
International Rectifier IRLML6402TR technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 3.7A |
| Current Rating | -3.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 633pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.3W |
| Rds On Max | 65mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRLML6402TR Datasheet
Download the complete datasheet for International Rectifier IRLML6402TR to view detailed technical specifications.
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