International Rectifier
IRLML6402TR
Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3
PackageTO-236-3
Current Rating-3.7A
MountingSurface Mount
Power1.3W
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Technical Specifications
International Rectifier IRLML6402TR technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
3.7A
Current Rating
-3.7A
Drain to Source Voltage (Vdss)
20V
Gate to Source Voltage (Vgs)
12V
Input Capacitance
633pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Cut Tape
Power Dissipation
1.3W
Rds On Max
65mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
-20V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRLML6402TR Datasheet
Download the complete datasheet for International Rectifier IRLML6402TR to view detailed technical specifications.
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