International Rectifier
IRLMS1902TRPBF
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-6
Current Rating3.2A
MountingSurface Mount
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Technical Specifications
International Rectifier IRLMS1902TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 3.2A |
| Current Rating | 3.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 10R |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.3mm |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 20V |
| Width | 1.75mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLMS1902TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLMS1902TRPBF to view detailed technical specifications.
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