P-channel MOSFET, 30V drain-source voltage, 2.4A continuous drain current, and 180mΩ maximum Rds(on). This single-element silicon Metal-Oxide-Semiconductor FET features a MICRO-6 package (SOT-23-6) for surface mounting. It operates within a -55°C to 150°C temperature range and offers a maximum power dissipation of 1.7W. The device is RoHS compliant and supplied on tape and reel.
International Rectifier IRLMS5703TRPBF technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 2.4A |
| Current Rating | -2.3A |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | -30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.3mm |
| Input Capacitance | 170pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.7W |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | -30V |
| Width | 1.75mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLMS5703TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
