N-channel power MOSFET featuring 55V drain-source breakdown voltage and 10A continuous drain current. This surface-mount component offers a low 140mΩ maximum drain-source on-resistance. Designed for efficient switching, it exhibits a 6.5ns turn-on delay and 12ns turn-off delay, with a 23ns fall time. Operating across a wide temperature range of -55°C to 175°C, it has a maximum power dissipation of 28W.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power28W
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Technical Specifications
International Rectifier IRLR014NTRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 140mR |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 265pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 28W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 6.5ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR014NTRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR014NTRPBF to view detailed technical specifications.
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