N-channel power MOSFET featuring 55V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 80mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. Key electrical characteristics include 480pF input capacitance and 7.1ns turn-on delay.
PackageDPAK
Current Rating17A
MountingSurface Mount
Power45W
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Technical Specifications
International Rectifier IRLR024NPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 80mR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Power Dissipation | 45W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7.1ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR024NPBF Datasheet
Download the complete datasheet for International Rectifier IRLR024NPBF to view detailed technical specifications.
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