International Rectifier
IRLR024NTRRPBF
Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power38W
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Technical Specifications
International Rectifier IRLR024NTRRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 480pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7.1ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR024NTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR024NTRRPBF to view detailed technical specifications.
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