
N-Channel Power MOSFET, DPAK package, featuring 55V drain-source breakdown voltage and 28A continuous drain current. Offers low on-resistance of 40mΩ (Rds On Max) and 65mΩ (Drain to Source Resistance). Operates with a gate-source voltage up to 16V and boasts a maximum power dissipation of 68W. This surface-mount component exhibits fast switching speeds with turn-on delay of 8.9ns and fall time of 29ns.
International Rectifier IRLR2705TRRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 880pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 46W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8.9ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLR2705TRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
