N-Channel Power MOSFET, DPAK package, featuring 55V drain-source breakdown voltage and 27mΩ maximum on-state resistance. Delivers 42A continuous drain current and 110W maximum power dissipation. Operates from -55°C to 175°C with a 16V gate-source voltage rating. Surface mountable with lead-free and RoHS compliance.
PackageDPAK
Current Rating41A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLR2905PBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
42A
Current Rating
41A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
27mR
Dual Supply Voltage
55V
Fall Time
15ns
Gate to Source Voltage (Vgs)
16V
Height
2.39mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
On-State Resistance
27mR
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
69W
Radiation Hardening
No
Rds On Max
27mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
26ns
Turn-On Delay Time
11ns
DC Rated Voltage
55V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLR2905PBF Datasheet
Download the complete datasheet for International Rectifier IRLR2905PBF to view detailed technical specifications.
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