N-Channel Power MOSFET, featuring 55V drain-source breakdown voltage and 42A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 13.5mΩ drain-source resistance. Designed for surface mounting in a TO-252-3 (DPAK) package, it boasts a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Key switching characteristics include a 33ns fall time, 24ns turn-off delay, and 14ns turn-on delay, with an input capacitance of 1.57nF.
PackageTO-252-3
MountingSurface Mount
Power110W
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Technical Specifications
International Rectifier IRLR2905ZTRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 42A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 13.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Element Configuration | Single |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.38mm |
| Input Capacitance | 1.57nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR2905ZTRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR2905ZTRPBF to view detailed technical specifications.
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