N-Channel Power MOSFET, 30V Drain-Source Voltage, featuring 31mΩ maximum Drain-Source On-Resistance and 33A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a 68W maximum power dissipation and operates within a temperature range of -55°C to 175°C. Designed for surface mounting in a TO-252AA (DPAK) package, it boasts a 36ns fall time and 14ns turn-off delay time. RoHS compliant and lead-free.
PackageDPAK
Current Rating35A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLR3303PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 31mR |
| Dual Supply Voltage | 30V |
| Fall Time | 36ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| On-State Resistance | 31mR |
| Package Quantity | 525 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Rds On Max | 31mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 14ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR3303PBF Datasheet
Download the complete datasheet for International Rectifier IRLR3303PBF to view detailed technical specifications.
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