N-Channel Power MOSFET, 100V Vds, 17A continuous drain current, and 105mΩ max on-resistance. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package, 79W power dissipation, and a gate-source voltage rating of 16V. Operating temperature range is -55°C to 175°C, with typical turn-on delay of 7.2ns and turn-off delay of 30ns.
PackageDPAK
Current Rating17A
MountingSurface Mount
Power79W
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Technical Specifications
International Rectifier IRLR3410PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 105mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 2.39mm |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| On-State Resistance | 105mR |
| Power Dissipation | 79W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 100V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR3410PBF Datasheet
Download the complete datasheet for International Rectifier IRLR3410PBF to view detailed technical specifications.
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