
N-Channel Power MOSFET, DPAK package, featuring 20V drain-source breakdown voltage and 36A continuous drain current. Offers low on-state resistance of 28mΩ (max) and 47W power dissipation. Designed for surface mounting with a nominal gate-source voltage of 3V, operating temperature range of -55°C to 175°C, and fast switching characteristics with a 4.5ns fall time. This RoHS compliant component is ideal for power switching applications.
International Rectifier IRLR3714PBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 20V |
| Dual Supply Voltage | 20V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 670pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Mount | Surface Mount |
| Nominal Vgs | 3V |
| On-State Resistance | 20mR |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 20mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLR3714PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
