International Rectifier
IRLR3715
Power Field-Effect Transistor, 54A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
International Rectifier IRLR3715 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 54A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 1.06nF |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Rds On Max | 14mR |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRLR3715 Datasheet
Download the complete datasheet for International Rectifier IRLR3715 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.