The IRLR3715PBF is a surface mount N-channel HEXFET MOSFET with a maximum drain current of 54A and a maximum drain to source breakdown voltage of 20V. It has a maximum drain to source resistance of 20mR and a maximum gate to source voltage of 20V. The device is rated for operation at temperatures up to 175°C and has a maximum power dissipation of 3.8W. It is available in a TO-252-3 package and is compliant with RoHS regulations.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power71W
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Technical Specifications
International Rectifier IRLR3715PBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 54A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 14MR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.06nF |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 3V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR3715PBF Datasheet
Download the complete datasheet for International Rectifier IRLR3715PBF to view detailed technical specifications.
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