
N-Channel Power MOSFET, DPAK package, featuring 30V drain-source breakdown voltage and 43A continuous drain current. Offers low on-resistance of 13.8mΩ at a nominal gate-source voltage of 1.8V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 40W. Includes fast switching characteristics with turn-on delay of 7.1ns and fall time of 3.5ns. Surface mountable and RoHS compliant.
International Rectifier IRLR7807ZTRRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 43A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 780pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 13.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.8ns |
| Turn-On Delay Time | 7.1ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLR7807ZTRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
