N-Channel Power MOSFET, 30V Vds, 65A Continuous Drain Current, 10mΩ Rds On. Features 75W Max Power Dissipation, 175°C Max Operating Temperature, and 3.2ns Fall Time. Surface mount DPAK package, 1.03nF Input Capacitance, and 20V Gate to Source Voltage. RoHS compliant and LEAD FREE.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power75W
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Technical Specifications
International Rectifier IRLR7821TRRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.03nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR7821TRRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR7821TRRPBF to view detailed technical specifications.
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