N-Channel Power MOSFET, DPAK package, featuring 30V drain-source breakdown voltage and 6mΩ Rds On. This silicon metal-oxide semiconductor FET offers a continuous drain current of 94A and a maximum power dissipation of 89W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 175°C, with typical turn-on delay of 9.2ns and fall time of 10ns.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRLR8113TRLPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 94A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.92nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9.2ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR8113TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRLR8113TRLPBF to view detailed technical specifications.
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