N-channel MOSFET, surface mount, in a TO-252-3 (DPAK) package. Features 30V drain-source breakdown voltage and a continuous drain current of 94A. Offers low on-resistance of 6mΩ at a nominal gate-source voltage of 2.25V. Maximum power dissipation is 89W, with operating temperatures ranging from -55°C to 175°C. Includes fast switching characteristics with turn-on delay time of 9.2ns and fall time of 10ns.
PackageTO-252-3
Current Rating94A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLR8113TRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 94A |
| Current Rating | 94A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 7.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6MR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.92nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 89W |
| Mount | Surface Mount |
| Nominal Vgs | 2.25V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9.2ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR8113TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR8113TRPBF to view detailed technical specifications.
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