N-Channel Power MOSFET, 30V Vds, 86A continuous drain current, and 5.8mΩ Rds(on). Features a TO-252-3 (DPAK) surface-mount package, 75W power dissipation, and operating temperatures from -55°C to 175°C. This silicon, metal-oxide semiconductor FET offers fast switching with turn-on delay of 12ns and fall time of 16ns. RoHS compliant and packaged on tape and reel.
PackageTO-252-3
MountingSurface Mount
Power75W
Quick Jump:
Technical Specifications
International Rectifier IRLR8726TRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 86A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 2.39mm |
| Input Capacitance | 2.15nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 12ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR8726TRPBF Datasheet
Download the complete datasheet for International Rectifier IRLR8726TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.