N-Channel Power MOSFET, featuring a 30V drain-source breakdown voltage and 58A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 8.9mΩ drain-source on-resistance. Designed for surface mounting in a TO-252-3 (DPAK-3) package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 55W. Key switching characteristics include a 10ns turn-on delay and 10ns fall time.
PackageTO-252-3
MountingSurface Mount
Power55W
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Technical Specifications
International Rectifier IRLR8729TRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.26mm |
| Input Capacitance | 1.35nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Power Dissipation | 55W |
| Rds On Max | 8.9mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLR8729TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRLR8729TRLPBF to view detailed technical specifications.
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