
N-Channel Power MOSFET, D2PAK package, featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 270A. Offers a low 2.4mΩ drain-source on-resistance and 380W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with a gate-source voltage rating of 16V. This surface-mount component boasts a turn-on delay of 66ns and a fall time of 110ns.
International Rectifier IRLS3036PBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 270A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 2.8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 2.4MR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 11.21nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 380W |
| Radiation Hardening | No |
| Rds On Max | 2.4mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 66ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLS3036PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.