N-CHANNEL MOSFET with 55V Drain-Source Breakdown Voltage and 16A Continuous Drain Current. Features 58mOhm maximum Drain-Source On Resistance at a nominal 3V Gate-Source Voltage. Operates across a wide temperature range from -55°C to 175°C with 35W maximum power dissipation. Through-hole mounting in a TO-251-3 package. RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
International Rectifier IRLU024ZPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 58MR |
| Dual Supply Voltage | 55V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 6.22mm |
| Input Capacitance | 380pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 58mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | Through Hole |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8.2ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU024ZPBF Datasheet
Download the complete datasheet for International Rectifier IRLU024ZPBF to view detailed technical specifications.
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