IRLU3103

Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3

PackageTO-251-3

MountingThrough Hole

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International Rectifier IRLU3103 technical specifications.

Package/Case

TO-251-3

Continuous Drain Current (ID)

55A

Drain to Source Voltage (Vdss)

30V

Input Capacitance

1.6nF

Max Power Dissipation

107W

Mount

Through Hole

Package Quantity

Packaging

Rail/Tube

Rds On Max

19mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.