N-Channel Power MOSFET, 30V Vds, 55A continuous drain current, and 19mΩ maximum drain-source on-resistance. Features include a 1.6nF input capacitance, 9ns turn-on delay, and 20ns turn-off delay. This silicon metal-oxide semiconductor FET is housed in a TO-251-3 (IPAK-3) package, suitable for through-hole mounting. Operates from -55°C to 175°C with a maximum power dissipation of 107W. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating55A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLU3103PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
55A
Current Rating
55A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
24mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
19mR
Dual Supply Voltage
30V
Fall Time
54ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
1.6nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
107W
Mount
Through Hole
Nominal Vgs
1V
On-State Resistance
19mR
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
69W
Radiation Hardening
No
Rds On Max
19mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1V
Turn-Off Delay Time
20ns
Turn-On Delay Time
9ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLU3103PBF Datasheet
Download the complete datasheet for International Rectifier IRLU3103PBF to view detailed technical specifications.
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