N-Channel Power MOSFET, 30V Vds, 55A continuous drain current, and 19mΩ maximum drain-source on-resistance. Features include a 1.6nF input capacitance, 9ns turn-on delay, and 20ns turn-off delay. This silicon metal-oxide semiconductor FET is housed in a TO-251-3 (IPAK-3) package, suitable for through-hole mounting. Operates from -55°C to 175°C with a maximum power dissipation of 107W. RoHS compliant and lead-free.
PackageTO-251-3
Current Rating55A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRLU3103PBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 55A |
| Current Rating | 55A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 19mR |
| Dual Supply Voltage | 30V |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Mount | Through Hole |
| Nominal Vgs | 1V |
| On-State Resistance | 19mR |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 69W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU3103PBF Datasheet
Download the complete datasheet for International Rectifier IRLU3103PBF to view detailed technical specifications.
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