
N-Channel Power MOSFET, TO-251AA package, featuring 12V drain-source breakdown voltage and 8.5mΩ Rds(on) at 10V gate-source voltage. Delivers 84A continuous drain current with a maximum power dissipation of 88W. Operates from -55°C to 175°C, with fast switching characteristics including 11ns turn-on delay and 17ns fall time. Through-hole mount, lead-free, and RoHS compliant.
International Rectifier IRLU3802PBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 84A |
| Current Rating | 84A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.49nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 12V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLU3802PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
