N-Channel Power MOSFET, 30V Drain-Source Voltage, 43A Continuous Drain Current, and 13.8mΩ Max Drain-Source On-Resistance. Features include a 1.8V Gate Threshold Voltage, 780pF Input Capacitance, and 3.5ns Fall Time. This silicon, metal-oxide semiconductor FET is housed in a TO-251AA (IPAK-3) package, supporting through-hole mounting. It operates from -55°C to 175°C with a maximum power dissipation of 40W and is RoHS compliant.
PackageTO-251-3
Current Rating43A
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
International Rectifier IRLU7807ZPBF technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 43A |
| Current Rating | 43A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 18.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.1mm |
| Input Capacitance | 780pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Nominal Vgs | 1.8V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 13.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 9.8ns |
| Turn-On Delay Time | 7.1ns |
| DC Rated Voltage | 30V |
| Width | 2.3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU7807ZPBF Datasheet
Download the complete datasheet for International Rectifier IRLU7807ZPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
