N-Channel MOSFET featuring 30V drain-source breakdown voltage and 58A continuous drain current. This component offers a low 11.9mΩ drain-source on-resistance and operates with a nominal gate-source voltage of 1.8V. Housed in a TO-251 package, it supports through-hole mounting and boasts a maximum power dissipation of 55W. Key switching characteristics include a 10ns turn-on delay and 10ns fall time, with an input capacitance of 1.35nF. Operating temperature range spans from -55°C to 175°C.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power55W
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Technical Specifications
International Rectifier IRLU8729PBF technical specifications.
General
| Package/Case | TO-251 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 6.22mm |
| Input Capacitance | 1.35nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Through Hole |
| Nominal Vgs | 1.8V |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | Through Hole |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 10ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLU8729PBF Datasheet
Download the complete datasheet for International Rectifier IRLU8729PBF to view detailed technical specifications.
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