IRLZ24NSTRL

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRLZ24NSTRL technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

18A

Drain to Source Voltage (Vdss)

55V

Input Capacitance

480pF

Max Power Dissipation

3.8W

Mount

Surface Mount

Package Quantity

800

Packaging

Tape and Reel

Rds On Max

60mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.