International Rectifier
IRLZ34N
Power Field-Effect Transistor, 27A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
MountingThrough Hole
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Technical Specifications
International Rectifier IRLZ34N technical specifications.
General
| Continuous Drain Current (ID) | 30A |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8.9ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRLZ34N Datasheet
Download the complete datasheet for International Rectifier IRLZ34N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.