IRLZ34NS

Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRLZ34NS technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

30A

Drain to Source Voltage (Vdss)

55V

Input Capacitance

880pF

Max Power Dissipation

3.8W

Mount

Surface Mount

Package Quantity

Packaging

Rail/Tube

Rds On Max

35mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.