N-Channel Power MOSFET, 55V Drain-Source Voltage, 47A Continuous Drain Current, and 22mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a 1.7nF input capacitance and a 2V threshold voltage. Designed for surface mounting in a TO-263 package, it offers a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Turn-on and turn-off delay times are 11ns and 26ns respectively, with a fall time of 15ns. This component is RoHS compliant and lead-free.
PackageTO-263
Current Rating47A
MountingSurface Mount
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Technical Specifications
International Rectifier IRLZ44NSTRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
47A
Current Rating
47A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
22mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
16V
Height
4.83mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Surface Mount
Packaging
Cut Tape
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
26ns
Turn-On Delay Time
11ns
DC Rated Voltage
55V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ44NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ44NSTRLPBF to view detailed technical specifications.
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