N-Channel Power MOSFET, 55V Drain-Source Voltage, 47A Continuous Drain Current, and 22mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a 1.7nF input capacitance and a 2V threshold voltage. Designed for surface mounting in a TO-263 package, it offers a maximum power dissipation of 110W and operates across a wide temperature range of -55°C to 175°C. Turn-on and turn-off delay times are 11ns and 26ns respectively, with a fall time of 15ns. This component is RoHS compliant and lead-free.
International Rectifier IRLZ44NSTRLPBF technical specifications.
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 47A |
| Current Rating | 47A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 22mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 55V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRLZ44NSTRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.