N-Channel Power MOSFET, D2PAK package, featuring 55V drain-source breakdown voltage and 47A continuous drain current. Offers low on-resistance of 22mΩ (max) and 35mΩ (typ) at 10Vgs. Designed for surface mounting with a maximum power dissipation of 110W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 15ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power110W
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Technical Specifications
International Rectifier IRLZ44NSTRRPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
47A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
55V
Fall Time
15ns
Gate to Source Voltage (Vgs)
16V
Height
4.83mm
Input Capacitance
1.7nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
22mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
26ns
Turn-On Delay Time
11ns
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRLZ44NSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ44NSTRRPBF to view detailed technical specifications.
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