N-Channel Power MOSFET, 55V Drain-Source Voltage, 51A Continuous Drain Current, and 13.5mΩ Rds(on). This silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a TO-263AB (D2PAK) surface-mount package, 80W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 14ns turn-on delay, 25ns turn-off delay, and 42ns fall time, with an input capacitance of 1.62nF. RoHS compliant and lead-free.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power80W
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Technical Specifications
International Rectifier IRLZ44ZSTRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 22.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 4.83mm |
| Input Capacitance | 1.62nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 13.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 14ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRLZ44ZSTRRPBF Datasheet
Download the complete datasheet for International Rectifier IRLZ44ZSTRRPBF to view detailed technical specifications.
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