International Rectifier
JANSR2N7476T1
Power Field-Effect Transistor, 45A I(D), 200V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
MountingThrough Hole
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Technical Specifications
International Rectifier JANSR2N7476T1 technical specifications.
General
| Continuous Drain Current (ID) | 45A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | Yes |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantYes |
Datasheet
International Rectifier JANSR2N7476T1 Datasheet
Download the complete datasheet for International Rectifier JANSR2N7476T1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.