International Rectifier
JANTXV2N7335
Power Field-Effect Transistor, 0.75A I(D), 100V, 1.73ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, MO-036AB, 14 PIN
MountingThrough Hole
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Technical Specifications
International Rectifier JANTXV2N7335 technical specifications.
General
| Continuous Drain Current (ID) | 750mA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Bulk |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier JANTXV2N7335 Datasheet
Download the complete datasheet for International Rectifier JANTXV2N7335 to view detailed technical specifications.
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