International Rectifier
SI4435DY
Power Field-Effect Transistor, 8A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
Current Rating-8A
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier SI4435DY technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8A
Current Rating
-8A
Drain to Source Breakdown Voltage
-30V
Drain to Source Voltage (Vdss)
30V
Input Capacitance
2.32nF
Lead Free
Contains Lead
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
95
Packaging
Rail/Tube
Power Dissipation
2.5W
Rds On Max
20mR
RoHS Compliant
No
Series
HEXFET®
DC Rated Voltage
-30V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier SI4435DY Datasheet
Download the complete datasheet for International Rectifier SI4435DY to view detailed technical specifications.
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