P-channel MOSFET with 30V drain-source breakdown voltage and 8A continuous drain current. Features low 20mΩ drain-source on-resistance at a nominal Vgs of -1V. Operates with a maximum power dissipation of 2.5W and a gate-source voltage up to 20V. This surface-mount device is housed in an SO package with lead-free termination and is RoHS compliant.
PackageSO
Current Rating-8A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier SI4435DYPBF technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Current Rating
-8A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
35mR
Dual Supply Voltage
-30V
Fall Time
31ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
2.5W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Termination
SMD/SMT
Turn-Off Delay Time
130ns
Turn-On Delay Time
16ns
DC Rated Voltage
-30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier SI4435DYPBF Datasheet
Download the complete datasheet for International Rectifier SI4435DYPBF to view detailed technical specifications.
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