N-channel Power MOSFET in SOIC package. Features a maximum continuous drain current of -8A and a drain-to-source voltage of -30V. Offers a low drain-source on-resistance of 20mΩ at a nominal Vgs of -1V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant.
PackageSOIC
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Technical Specifications
International Rectifier SI4435DYTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | -8A |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 20mR |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Nominal Vgs | -1V |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier SI4435DYTRPBF Datasheet
Download the complete datasheet for International Rectifier SI4435DYTRPBF to view detailed technical specifications.
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