N-channel Power MOSFET in SOIC package. Features a maximum continuous drain current of -8A and a drain-to-source voltage of -30V. Offers a low drain-source on-resistance of 20mΩ at a nominal Vgs of -1V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant.
PackageSOIC
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Technical Specifications
International Rectifier SI4435DYTRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
-8A
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
20mR
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Nominal Vgs
-1V
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
International Rectifier SI4435DYTRPBF Datasheet
Download the complete datasheet for International Rectifier SI4435DYTRPBF to view detailed technical specifications.
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