The 1N4448 is a general purpose rectifier diode with a maximum operating temperature of 200 degrees Celsius. It features a silicon diode element and a rectifier diode type. The diode has a maximum reverse voltage of 100 volts and a maximum power dissipation of 0.5 watts. It is packaged in a DO-35 axial package type.
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Technical Specifications
International Semiconductor 1N4448 technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 100 |
| Power Dissipation-Max | 0.5 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor 1N4448 Datasheet
Download the complete datasheet for International Semiconductor 1N4448 to view detailed technical specifications.
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