This silicon variable capacitance diode features a minimum breakdown voltage of 20V and a maximum reverse voltage of 55V. It has a maximum power dissipation of 0.4W and is packaged in a DO-7 axial configuration. The diode element is made of silicon and is a single element device.
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Technical Specifications
International Semiconductor 1N4795 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-7 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Rep Pk Reverse Voltage-Max | 55 |
| Breakdown Voltage-Min | 20 |
| Power Dissipation-Max | 0.4 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor 1N4795 Datasheet
Download the complete datasheet for International Semiconductor 1N4795 to view detailed technical specifications.
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